BRT12-H-X009 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
MFG CO.
BRT12-H-X009 Datasheet PDF : 8 Pages
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BRT11/ 12/ 13
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
Reverse current
Thermal resistance 2) junction - ambient
IF = 10 mA
VR = 6 V
VF
IR
Rthja
1.1
1.35
V
10
µA
750
°C/W
2) Static air, SITAC soldered in pcb or base plate.
Output
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Critical rate of rise of off-state VD = 0.67 VDRM, TJ = 25 °C
dV/dtcr
10
voltage
kV/µs
VD = 0.67 VDRM, TJ = 80 °C
dV/dtcr
5
Critical rate of rise of voltage at VD = 0.67 VDRM, TJ = 25 °C,
dV/dtcrq
10
current commutation
dI/dtcrq ≤ 15 A/ms
VD = 0.67 VDRM, TJ = 80 °C,
dV/dtcrq
5
dI/dtcrq ≤ 15 A/ms
Critical rate of rise of on-state
current
dI/dtcr
8
kV/µs
kV/µs
kV/µs
A/µs
Pulse current
On-state voltage
Off-state current
Holding current
Thermal resistance 2) junction -
ambient
tp ≤ 5 µs, f 0 100 Hz,
dItp/dt ≤ 8 A/µs
IT = 300 mA
TC = 80 °C, VDRM
VD = 10 V
RthJA
Itp
VT
ID
IH
Rthja
2
A
2.3
V
0.5
100
µA
80
500
µA
125
°C/W
2) Static air, SITAC soldered in pcb or base plate.
Coupler
Parameter
Trigger current
Trigger current temperature
gradient
Capacitance (input-output)
Test condition
VD = 10 V, F - Versions
VD = 10 V, H - Versions
VD = 10 V, M - Versions
VR = 0 V, f = 1 kHz
Symbol
Min
Typ.
Max
Unit
IFT
1.2
mA
IFT
0.4
2
mA
IFT
0.8
3
mA
∆IFT/∆Tj
7
14
µA/°C
CIO
2
pF
Document Number 83689
Rev. 1.4, 11-Apr-05
www.vishay.com
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