BFG505 View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

MFG CO.

BFG505

NPN 9 GHz wideband transistors

NXP Semiconductors. 

NXP Semiconductors

NPN 9 GHz wideband transistors

Product specification

BFG505; BFG505/X

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL

VCBO

VCES

VEBO

IC

Ptot

Tstg

Tj

PARAMETER

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

total power dissipation

storage temperature range

junction temperature

CONDITIONS

open emitter

RBE = 0

open collector

Ts ≤ 130 °C; see Fig.2; note 1

Note

1. Ts is the temperature at the soldering point of the collector pin.

MIN.

−

−

−

−

−

−65

−

MAX.

20

15

2.5

18

150

150

175

UNIT

V

V

V

mA

mW

°C

°C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-s

thermal resistance from junction to soldering point note 1

Note

1. Ts is the temperature at the soldering point of the collector pin.

VALUE

290

UNIT

K/W

handboo2k,0h0alfpage

Ptot

(mW)

150

MRA638-1

100

50

0

0

50

100

150

200

Ts (°C)

Fig.2 Power derating curve.

Rev. 04 - 22 November 2007

3 of 13

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