BF998...
Total power dissipation Ptot = ƒ(TS)
BF998, BF998R
220
mW
180
160
140
120
100
80
60
40
20
0
0 15 30 45 60 75 90 105 120 °C 150
TS
Gate 1 forward transconductance
gfs = ƒ(ID)
VDS = 5V, VG2S = Parameter
26
mS
4V
22
20
2V
18
16
14
1V
12
10
8
6
4
2 0V
0
0
4
8
12
16 mA
24
ID
Output characteristics ID = ƒ(VDS)
VG2S = 4 V
VG1S = Parameter
26
mA
0.4V
22
20
0.2V
18
16
0V
14
12
10
-0.2V
8
6
-0.4V
4
2
0
0
2
4
6
8 10 V
14
VDS
Gate 1 forward transconductance
gfs1 = ƒ (VG1S)
26
mS
4V
22
20
2V
18
16
14
12
10
8
1V
6
4
0V
2
0
-1 -0.75 -0.5 -0.25 0 0.25 V 0.75
VG1S
4
2007-04-20