Philips Semiconductors
N-channel junction FETs
Product specification
BF861A; BF861B; BF861C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
VGSO
VDGO
IG
Ptot
Tstg
Tj
PARAMETER
drain-source voltage (DC)
gate-source voltage
drain-gate voltage (DC)
forward gate current (DC)
total power dissipation
storage temperature
operating junction temperature
CONDITIONS
MIN.
−
open drain
−
open source
−
−
up to Tamb = 25 °C; note 1 −
−65
−
Note
1. Device mounted on an FR4 printed-circuit board.
MAX.
25
25
25
10
250
+150
150
UNIT
V
V
V
mA
mW
°C
°C
300
Ptot
(mW)
200
MRC166
100
00
50
100
Tamb
(oC) 150
Fig.2 Power derating curve.
1997 Sep 04
3