Philips Semiconductors
N-channel junction FETs
Product specification
BF861A; BF861B; BF861C
FEATURES
• High transfer admittance
• Low input capacitance
• Low feedback capacitance
• Low noise.
APPLICATIONS
• Preamplifiers for AM tuners in car radios.
handbook, halfpa2ge
1
d
g
s
3
Top view
MAM036
DESCRIPTION
N-channel symmetrical junction field effect transistors in a
SOT23 package.
PINNING - SOT23
PIN
SYMBOL
1
s
2
d
3
g
DESCRIPTION
source
drain
gate
Marking codes:
BF861A: M33.
BF861B: M34.
BF861C: M35.
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
drain-source voltage (DC)
IDSS
drain current
BF861A
BF861B
BF861C
Ptot
yfs
total power dissipation
forward transfer admittance
BF861A
BF861B
BF861C
Ciss
input capacitance
Crss
reverse transfer capacitance
CONDITIONS
VGS = 0; VDS = 8 V
up to Tamb = 25 °C
VGS = 0; VDS = 8 V
f = 1 MHz
f = 1 MHz
MIN. MAX. UNIT
−
25
V
2
6.5
mA
6
15
mA
12
25
mA
−
250
mW
12
20
mS
16
25
mS
20
30
mS
−
10
pF
−
2.7
pF
1997 Sep 04
2