BF1206F View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
BF1206F Datasheet PDF : 20 Pages
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Philips Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
8.3.2 Scattering parameters for amplifier B
Table 12: Scattering parameters for amplifier B
VDS(B) = 2.8 V; VG2-S = 2.5 V; ID(B) = 4 mA; VDS(A) = 0 V; VG1-S(A) = 0 V; Tamb = 25 °C; typical values.
f (MHz) s11
s21
s12
s22
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
50
0.9939
−3.12 2.27
176.11 0.00089
94.68 0.993
100
0.9936
−6.29 2.26
172.41 0.00170
84.37 0.993
200
0.9896
−12.47 2.25
164.98 0.00336
81.29 0.992
300
0.9845
−18.59 2.23
157.64 0.00503
77.17 0.990
400
0.9779
−24.66 2.20
150.35 0.00642
73.23 0.988
500
0.9703
−30.55 2.16
143.16 0.00769
69.72 0.986
600
0.9620
−36.37 2.13
136.02 0.00873
66.28 0.983
700
0.9529
−42.10 2.08
129.01 0.00967
63.19 0.980
800
0.9439
−47.79 2.04
122.01 0.01024
60.51 0.977
900
0.9353
−53.24 1.99
115.30 0.01058
58.52 0.975
1000 0.9266
−58.46 1.94
108.64 0.01074
57.24 0.973
8.3.3 Noise data for amplifier B
Table 13: Noise data for amplifier B
VDS(B) = 2.8 V; VG2-S = 2.5 V; ID(B) = 4 mA.
f (MHz)
NFmin (dB)
400
0.9
800
1.0
Γopt
ratio
0.8
0.83
(deg)
19
46
rn (ratio)
0.9
0.96
Angle
(deg)
−1.62
−3.23
−6.44
−9.65
−12.85
−16.00
−19.18
−22.37
−25.50
−28.66
−31.85
9. Test information
VAGC
R1
10 kΩ
C1
4.7 nF
RGEN
50 Ω
VI
C2
4.7 nF
R2
50 Ω
RG1
VGG
Fig 32. Cross-modulation test setup (for one MOSFET)
C3
4.7 nF
DUT
L1
≈ 2.2 µH
C4
4.7 nF
VDS
RL
50 Ω
001aad926
BF1206F_1
Product data sheet
Rev. 01 — 30 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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