BDT60BF View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

BDT60BF

Silicon PNP Darlington Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistors BDT60F/AF/BF/CF

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

BDT60F

VCEO(SUS)

Collector-Emitter

Sustaining Voltage

BDT60AF

BDT60BF

IC= -30mA; IB= 0

BDT60CF

VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB=B -6mA

VBE(on) Base-Emitter On Voltage

ICBO

Collector Cutoff Current

ICEO

Collector Cutoff Current

IC= -1.5A ; VCE= -3V

VCB= -30V; IE= 0

VCB= 1/2VCBO; IE= 0; TJ=150℃

VCE= 1/2VCEO; IB= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE-1

DC Current Gain

IC= -0.5A ; VCE= -3V

hFE-2

DC Current Gain

IC= -1.5A ; VCE= -3V

hFE-3

DC Current Gain

IC= -4A ; VCE= -3V

VECF-1 C-E Diode Forward Voltage

IF= 1.5A

VECF-2 C-E Diode Forward Voltage

IF= 4A

Switching Times

ton

Turn-On Time

toff

Turn-Off Time

IC= -1.5A; IB1= -IB2= -6mA

MIN TYP. MAX UNIT

-60

-80

V

-100

-120

-2.5 V

-2.5 V

-0.2

-1

mA

-0.2 mA

-5 mA

2000

750

250

2

V

2.1

V

0.3 1.5 μs

1.5 5.0 μs

isc Website：www.iscsemi.cn

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