BD706 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

BD706

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

BD706

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -100mA; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB=B -0.4A

VBE(on) Base-Emitter On Voltage

IC= -4A; VCE= -4V

ICEO

Collector Cutoff Current

ICBO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

VCE= -22V; IB=B 0

VCB= -45V; IE= 0

VCB= -45V; IE= 0; TC= 150℃

VEB= -5V; IC= 0

hFE-1

DC Current Gain

IC= -0.5A; VCE= -2V

hFE-2

DC Current Gain

IC= -2A; VCE= -2V

hFE-3

DC Current Gain

IC= -4A; VCE= -4V

hFE-4

DC Current Gain

IC= -10A; VCE= -4V

fT

Current-Gain—Bandwidth Product IC= -0.3A; VCE= -3V

MIN MAX UNIT

-45

V

-1.0

V

-1.5

V

-1.0 mA

-0.1

-1.0

mA

-1.0 mA

40 400

30

20 150

5

3

MHz

isc Website：www.iscsemi.cn

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