BD706 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

BD706

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

BD706

DESCRIPTION

·DC Current Gain -

: hFE = 40(Min.)@ IC= -0.5A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= -45V(Min.)

·Complement to Type BD705

APPLICATIONS

·Designed for use in power linear and switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-45

V

VCES

Collector-Emitter Voltage VBE= 0

-45

V

VCEO

Collector-Emitter Voltage

-45

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-12

A

IBB

Base Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

-5

A

75

W

150

℃

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c

Rth j-a

Thermal Resistance, Junction to Case

1.67 ℃/W

Thermal Resistance, Junction to Ambient 70 ℃/W

isc Website：www.iscsemi.cn

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