BD645 View Datasheet(PDF) - Bourns, Inc
Part Name
Description
MFG CO.
BD645 Datasheet PDF : 4 Pages
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BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
50000
10000
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS130AD
TC = -40°C
TC = 25°C
TC = 100°C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
2·0
TCS130AB
tp = 300 µs, duty cycle < 2%
IB = IC / 100
1·5
1000
VCE = 3 V
tp = 300 µs, duty cycle < 2%
100
0·5
1·0
IC - Collector Current - A
Figure 1.
1·0
0·5
10
0·5
1·0
TC = -40°C
TC = 25°C
TC = 100°C
10
IC - Collector Current - A
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
3·0
TCS130AC
TC = -40°C
TC = 25°C
2·5 TC = 100°C
2·0
1·5
1·0
IB = IC / 100
tp = 300 µs, duty cycle < 2%
0·5
0·5
1·0
10
IC - Collector Current - A
Figure 3.
MAY 1993 - REVISED JUNE 2013
3
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
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