BD315 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

BD315

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

BD315

DESCRIPTION

·Excellent Safe Operating Area

·DC Current Gain-hFE= 25(Min.)@IC = 8A

·Collector-Emitter Saturation Voltage-

: VCE(sat)= 1.0 V(Max)@ IC = 8A

·Complement to Type BD316

APPLICATIONS

·Designed for high quality amplifiers operating up to 100 watts

into 4 ohm load.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

80

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

16

A

ICM

Collector Current-Peak

20

A

IBB

Base Current-Continuous

5

A

PC

Collector Power Dissipation@TC=25℃ 200

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX UNIT

0.875 ℃/W

isc Website：www.iscsemi.cn

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