BCY79IX View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
BCY79IX Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP switching transistors
Product specification
BCY78; BCY79
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
ICBO
IEBO
hFE
hFE
hFE
hFE
VCEsat
VBEsat
VBE
Cc
Ce
fT
collector cut-off current
BCY78
collector cut-off current
IE = 0; VCB = −32 V
−
IE = 0; VCB = −32 V; Tamb = 150 °C −
BCY79
emitter cut-off current
DC current gain
BCY78/VII; BCY79/VII
IE = 0; VCB = −45 V
−
IE = 0; VCB = −45 V; Tamb = 150 °C −
IC = 0; VEB = −5 V
−
IC = −10 µA; VCE = −5 V
−
BCY78/VIII; BCY79/VIII
30
BCY78/IX; BCY79/IX
40
BCY78/X
100
DC current gain
IC = −2 mA; VCE = −5 V
BCY78/VII; BCY79/VII
120
BCY78/VIII; BCY79/VIII
180
BCY78/IX; BCY79/IX
250
BCY78/X
380
DC current gain
IC = −10 mA; VCE = −1 V
BCY78/VII; BCY79/VII
80
BCY78/VIII; BCY79/VIII
120
BCY78/IX; BCY79/IX
160
BCY78/X
240
DC current gain
IC = −100 mA; VCE = −1 V
BCY78/VII; BCY79/VII
40
BCY78/VIII; BCY79/VIII
45
BCY78/IX; BCY79/IX
60
BCY78/X
60
collector-emitter saturation voltage IC = −10 mA; IB = −250 µA
−
IC = −100 mA; IB = −2.5 mA
−
base-emitter saturation voltage IC = −10 mA; IB = −250 µA
−600
IC = −100 mA; IB = −2.5 mA
−700
base-emitter voltage
IC = −10 µA; VCE = −5 V
−
IC = −2 mA; VCE = −5 V
−600
IC = −10 mA; VCE = −1 V
−
IC = −100 mA; VCE = −1 V
−
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
emitter capacitance
IC = ic = 0; VEB = −500 mV; f = 1 MHz −
transition frequency
IC = −10 mA; VCE = −5 V; f = 100 MHz 100
−2
−
−2
−
−
140
200
270
340
170
250
350
500
180
260
360
500
−
−
−
−
−120
−400
−700
−850
−550
−650
−650
−750
−
−
−
−15 nA
−10 µA
−15 nA
−10 µA
−20 nA
−
−
−
−
220
310
460
630
−
400
630
1 000
−
−
−
−
−250 mV
−800 mV
−850 mV
−1200 mV
−
mV
−750 mV
−
mV
−
mV
7
pF
15 pF
−
MHz
1997 Jun 18
4
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