Philips Semiconductors
PNP switching transistors
Product specification
BCY78; BCY79
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• Switching and amplification.
DESCRIPTION
PNP switching transistor in a TO-18 metal package.
NPN complements: BCY58 and BCY59.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
handbook, halfpa1ge
2
3
3
2
MAM263
1
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage
BCY78
BCY79
VCEO
collector-emitter voltage
BCY78
BCY79
IC
collector current (DC)
Ptot
total power dissipation
hFE
DC current gain
BCY78/VII; BCY79/VII
BCY78/VIII; BCY79/VIII
BCY78/IX; BCY79/IX
BCY78/X
fT
transition frequency
toff
turn-off time
CONDITIONS
MIN.
open emitter
−
−
open base
−
−
−
Tamb ≤ 45 °C
−
Tcase ≤ 45 °C
−
IC = −2 mA; VCE = −5 V
120
180
250
380
IC = −10 mA; VCE = −5 V
100
ICon = −100 mA; IBon = −10 mA; IBoff = 10 mA −
MAX. UNIT
−32
V
−45
V
−32
V
−45
V
−100 mA
340
mW
1
W
220
310
460
630
−
MHz
400
ns
1997 Jun 18
2