BC856AW(2011) View Datasheet(PDF) - Diotec Semiconductor Germany
Part Name
Description
MFG CO.
BC856AW
(Rev.:2011)
(Rev.:2011)
Diotec Semiconductor Germany
BC856AW Datasheet PDF : 2 Pages
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BC856W ... BC859W
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
- IC = 10 mA, - IB = 0.5 mA
- IC = 100 mA, - IB = 5 mA
- VBEsat
–
700 mV
–
- VBEsat
–
850 mV
–
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
- VCE = 5 V, - IC = 2 mA
- VCE = 5 V, - IC = 10 mA
- VBE
- VBE
600 mV
–
650 mV
–
750 mV
820 mV
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VCB = 30 V, (E open)
- VCE = 30 V, Tj = 125°C, (E open)
- ICBO
–
- ICBO
–
–
15 nA
–
5 µA
Emitter-Base cutoff current
- VEB = 5 V, (C open)
- IEBO
–
–
100 nA
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
fT
100 MHz
–
–
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE =ie = 0, f = 1 MHz
CCBO
–
–
4.5 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Noise figure – Rauschzahl
CEBO
–
10 pF
15 pF
- VCE = 5 V, - IC = 200 µA, RG = 2 kΩ BC856W ... BC858W
F
–
–
10 dB
f = 1 kHz, Δf = 200 Hz
BC859W
F
–
1 dB
4 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 620 K/W 1)
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BC846W ... BC849W
Marking of available current gain
groups per type
Stempelung der lieferbare Stromverstärkungs-
gruppen pro Typ
BC856AW = 3A
BC857AW = 3E
BC858AW = 3J
BC856BW = 3B
BC857BW = 3F
BC858BW = 3K
BC859BW = 4B
BC857CW = 3G
BC858CW = 3L
BC859CW = 4C
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
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