BC847DS,125 View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

MFG CO.

BC847DS,125

45 V, 100 mA NPN/NPN general-purpose transistor

NXP Semiconductors. 

BC847DS

45 V, 100 mA NPN/NPN general-purpose transistor

Rev. 01 — 25 August 2009

Product data sheet

1. Product profile

1.1 General description

NPN/NPN general-purpose transistor pair in a small SOT457 (SC-74) Surface-Mounted

Device (SMD) plastic package.

1.2 Features

I Low collector capacitance

I Low collector-emitter saturation voltage

I Closely matched current gain

I Reduces number of components and board space

I No mutual interference between the transistors

I AEC-Q101 qualified

1.3 Applications

I General-purpose switching and amplification

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Per transistor

VCEO

IC

hFE

collector-emitter voltage open base

collector current

DC current gain

VCE = 5 V; IC = 2 mA

Min Typ Max Unit

-

-

45

V

-

-

100 mA

200 300 450

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