BC847CM View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
BC847CM Datasheet PDF : 10 Pages
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Philips Semiconductors
NPN general purpose transistors
Product specification
BC847M series
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector-base cut-off current
IEBO
emitter-base cut-off current
hFE
DC current gain
BC847AM
BC847BM
BC847CM
VBE
base-emitter voltage
VCEsat
collector-emitter saturation voltage
Cc
collector capacitance
fT
transition frequency
F
noise figure
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
CONDITIONS
VCB = 30 V; IE = 0
VCB = 30 V; IE = 0; Tj = 150 °C
VEB = 5 V; IC = 0
VCE = 5 V; IC = 2 mA
IC = 2 mA; VCE = 5 V
IC = 10 mA; VCE = 5 V
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA; note 1
IE = ie = 0; VCB = 10 V; f = 1 MHz
VCE = 5 V; IC = 10 mA;
f = 100 MHz
IC = 200 µA; VCE = 5 V;
RS = 2 kΩ; f = 1 kHz; B = 200 Hz
MIN.
−
−
−
110
200
420
580
−
−
−
−
100
−
MAX.
15
5
100
220
450
800
700
770
200
400
1.5
−
10
UNIT
nA
µA
nA
mV
mV
mV
mV
pF
MHz
dB
2004 Mar 10
4
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