BBY53-02V(2007) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

MFG CO.

BBY53-02V
(Rev.:2007)

Silicon Tuning Diode

Infineon Technologies 

BBY53...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Reverse current

VR = 4 V

VR = 4 V, TA = 85 °C

IR

nA

-

-

10

-

- 200

AC Characteristics

Diode capacitance

VR = 1 V, f = 1 MHz

VR = 3 V, f = 1 MHz

Capacitance ratio

VR = 1 V, VR = 3 V, f = 1 MHz

Series resistance

VR = 1 V, f = 1 GHz

CT

CT1/CT3

pF

4.8 5.3 5.8

1.85 2.4 3.1

1.8 2.2 2.6 -

rS

- 0.47 - Ω

2

2007-09-18

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