AO7417
P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
VDS=-4.5V
ID=-2A VDS=10V
4
ID=2.2A
3
2
VGS=4.5V, ID=1.8A
1
VGS=2.5V, ID=1.7A
0
VGS=1.8V, ID=1A
0
2
4
V6GS=1.5V,8ID=1A 10
Qg (nC)
Figure 7: Gate-Charge Characteristics
1400
1200
1000
800
Ciss
600
400
200
Coss
Crss
0
0
5
10
15
20
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0 RDS(ON)
limited
1.0
10µs
100µs
1ms
10ms
0.1
TJ(Max)=150°C
TA=25°C
0.0
100ms
1s
DC
10s
0.1
1
10
100
-VDS (Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note E)
100
TJ(Max)=150°C
TA=25°C
10
1
0.1
0.0001 0.001 0.01 0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=220°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
Single Pulse
PD
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
1000
4/4
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