IS62LV2568ALL-85H View Datasheet(PDF) - Integrated Silicon Solution

Part Name

Description

MFG CO.

IS62LV2568ALL-85H

256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

Integrated Silicon Solution 

IS62LV2568ALL

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter

Test Conditions

VOH

Output HIGH Voltage VCC = Min., IOH = –1.0 mA

VOL

Output LOW Voltage

VCC = Min., IOL = 2.1 mA

VIH

Input HIGH Voltage

VIL

Input LOW Voltage(1)

ILI

Input Leakage

GND ≤ VIN ≤ VCC

ILO

Output Leakage

GND ≤ VOUT ≤ VCC

Note:

1. VIL = –3.0V for pulse width less than 10 ns.

ISSI ®

Min.

2.0

—

2.2

–0.3

–1

–1

Max.

—

0.4

VCC + 0.3

0.4

1

1

Unit

V

V

V

V

µA

µA

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

Symbol Parameter

Test Conditions

-70

Min. Max.

-85

Min. Max.

ICC

Vcc Dynamic VCC = Max., CE = VIL

Com.

Operating

IOUT = 0 mA, f = fMAX

Ind.

Supply Current

—

30

—

35

—

25

—

30

ISB1

TTL Standby VCC = Max.,

Com.

Current

VIN = VIH or VIL,

Ind.

(TTL Inputs)

CE1 ≥ VIH or CE2 ≤ VIL, f = 0

—

0.4

—

1.0

—

0.4

—

1.0

ISB2

CMOS Standby VCC = Max., f = 0

Com.

Current

CE1 ≥ VCC – 0.2V,

Ind.

(CMOS Inputs) CE2 ≤ 0.2V,

or VIN ≥ VCC – 0.2V, VIN ≤ 0.2V

—

5

—

5

—

5

—

5

Note:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

Unit

mA

mA

µA

4

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. B

08/01/01

Share Link: