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AD7750AR View Datasheet(PDF) - Analog Devices

Part Name
Description
MFG CO.
AD7750AR
ADI
Analog Devices 
AD7750AR Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
AD7750
Parameter
A Version
–40؇C to
+85؇C
Units
Test Conditions/Comments
POWER SUPPLY
VDD
IDD
4.75
V min
5.25
V max
5.5
mA max
For Specified Performance, Digital Input @ AGND
or VDD
5 V – 5%
5 V + 5%
Typically 3.5 mA
NOTES
1See plots in Typical Performance Graphs.
2External current amplification/drive should be used if higher current source and sink capabilities are required, e.g., bipolar transistor.
All specifications subject to change without notice.
TIMING CHARACTERISTICS1, 2 (VDD = 5 V, AGND = 0 V, DVDD = 0 V, REFIN = REFOUT. All specifications TMIN to TMAX
unless otherwise noted.)
Parameter A Version
Units
Test Conditions/Comments
t13
275
ms
F1 and F2 Pulsewidth (Logic Low)
t2
See Table I
s
Output Pulse Period. See Table I to Determine the Output Frequency
t3
t2/2
s
Time Between F1 Falling Edge and F2 Falling Edge
t43
90
ms
FOUT Pulsewidth (Logic High)
t5
See Table I
s
FOUT Pulse Period. See Table I to Determine the Output Frequency
t6
CLKIN/4
s
Minimum Time Between F1 and F2 Pulse
NOTES
1Sample tested during initial release and after any redesign or process change that may affect this parameter.
2See Figure 18.
3The pulsewidths of F1, F2 and FOUT are not fixed for higher output frequencies. See the Digital-to-Frequency Converter (DTF) section for an explanation.
Specifications subject to change without notice.
ABSOLUTE MAXIMUM RATINGS*
(TA = +25°C unless otherwise noted)
VDD to AGND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
VDD to DGND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
Analog Input Voltage to AGND
V1+, V1–, V2+ and V2– . . . . . . . . . . . . . . . . . . . . –6 V to +6 V
Reference Input Voltage to AGND . . . . –0.3 V to VDD + 0.3 V
Digital Input Voltage to DGND . . . . . . –0.3 V to VDD + 0.3 V
Digital Output Voltage to DGND . . . . . –0.3 V to VDD + 0.3 V
Operating Temperature Range
Commercial (A Version) . . . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
20-Lead SOIC Package, Power Dissipation . . . . . . . . 450 mW
θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 74°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . +215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . +220°C
20-Lead Plastic DIP, Power Dissipation . . . . . . . . . . 450 mW
θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . 102°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . +215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . +220°C
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Model
AD7750AN
AD7750AR
ORDERING GUIDE
Temperature
Range
–40°C to +85°C
–40°C to +85°C
Package
Description
20-Lead Plastic DIP
20-Lead Wide Body SOIC
Package
Options
N-20
R-20
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD7750 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. 0
–3–

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