ACST4-7CB-TR(2003) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
ACST4-7CB-TR Datasheet PDF : 9 Pages
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ACST4 Series
PARAMETER DESCRIPTION
Parameter Symbol
Parameter description
IGT
Triggering gate current
VGT
Triggering gate voltage
VGD
Non-triggering gate voltage
IH
Holding current
IL
Latching current
VTM
Peak on-state voltage drop
VTO
On state threshold voltage
Rd
On state dynamic resistance
IDRM / IRRM
dV/dt
Maximum forward or reverse leakage current
Critical rate of rise of off-state voltage
(dV/dt)c
Critical rate of rise of commutating off-state voltage
(dI/dt)c
Critical rate of decrease of commutating on-state current
VCL
Clamping voltage
ICL
Clamping current
ELECTRICAL CHARACTERISTICS
For either positive or negative polarity of pin OUT voltage in respect to pin COM voltage.
Symbol
IGT
VGT
VGD
IH
IL
VTM
VTO
Rd
IDRM /
IRRM
dV/dt
(dI/dt)c
VCL
Test Conditions
VOUT=12V (DC)
RL=33Ω
QI - QII - QIII
VOUT=12V (DC)
RL=33Ω
QI - QII - QIII
VOUT=VDRM RL=3.3kΩ
IOUT= 100mA gate open
IG= 2 x IGtmax
IOUT = 5.6A tp=380µs
Tj=25°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=125°C
Tj=125°C
VOUT = 700V
Tj=25°C
Tj=125°C
VOUT=460V gate open
(dV/dt)c = 15V/µs
Tj=110°C
Tj=125°C
ICL = 1mA tp=1ms
Tj=25°C
MAX
MAX
MIN
MAX
MAX
MAX
MAX
MAX
MAX
MAX
MIN
MIN
TYP
ACST4-7S ACST4-7C
10
25
1
1.1
0.2
20
35
40
60
1.5
0.90
100
10
500
200
500
2.0
2.5
1100
Unit
mA
V
V
mA
mA
V
V
mΩ
µA
V/µs
A/ms
V
3/9
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