28F020 View Datasheet(PDF) - Intel

Part Name

Description

MFG CO.

28F020

2048K (256K x 8) CMOS FLASH MEMORY

Intel 

28F020

DC CHARACTERISTICS TTL NMOS COMPATIBLE Extended Temperature

Products

Symbol

Parameter

Limits

Notes

Min Typ(3) Max

Unit

Test Conditions

ILI

Input Leakage Current

1

ILO

Output Leakage Current

1

ICCS VCC Standby Current

1

ICC1 VCC Active Read Current

1

ICC2 VCC Programming Current

12

ICC3 VCC Erase Current

12

ICC4 VCC Program Verify Current

12

g1 0

mA VCC e VCC Max

VIN e VCC or VSS

g10

mA VCC e VCC Max

VOUT e VCC or VSS

03

10

mA VCC e VCC Max

CE e VIH

10

30

mA VCC e VCC Max CE e VIL

f e 6 MHz IOUT e 0 mA

10

30 mA Programming in Progress

50

30 mA Erasure in Progress

50

30

mA VPP e VPPH

Program Verify in Progress

ICC5 VCC Erase Verify Current

12

50

30

mA VPP e VPPH

Erase Verify in Progress

IPPS VPP Leakage Current

1

IPP1 VPP Read Current ID Current 1

or Standby Current

IPP2 VPP Programming Current

12

g10 mA VPP s VCC

90

200 mA VPP l VCC

g10

VPP s VCC

8

30

mA VPP e VPPH

Programming in Progress

IPP3 VPP Erase Current

12

IPP4 VPP Program Verify Current

12

10

30

mA VPP e VPPH

20

50

mA VPP e VPPH

Program Verify in Progress

IPP5 VPP Erase Verify Current

12

20

50

mA VPP e VPPH

Erase Verify in Progress

VIL

Input Low Voltage

VIH

Input High Voltage

VOL Output Low Voltage

VOH1 Output High Voltage

VID

A9 Intelligent Identifer

Voltage

b0 5

20

24

11 50

08

V

VCC a 0 5 V

0 45

V IOL e 5 8 mA

VCC e VCC Min

V IOH e b2 5 mA

VCC e VCC Min

13 00 V

IID

A9 Intelligent Identifier

12

90

500 mA A9 e VID

Current

VPPL

VPPH

VPP during Read-Only

Operations

VPP during Read Write

Operations

0 00

11 40

65

12 60

V NOTE Erase Program are

Inhibited when VPP e VPPL

V

VLKO VCC Erase Write Lock Voltage

25

V

17

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