74LVC1GU04-Q100 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
MFG CO.
74LVC1GU04-Q100 Datasheet PDF : 14 Pages
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NXP Semiconductors
74LVC1GU04-Q100
Unbuffered inverter
Table 7. Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
VOL
LOW-level output voltage VI = VIH or VIL
IO = 100 A;
-
VCC = 1.65 V to 5.5 V
IO = 4 mA; VCC = 1.65 V
-
IO = 8 mA; VCC = 2.3 V
-
IO = 12 mA; VCC = 2.7 V
-
IO = 24 mA; VCC = 3.0 V
-
IO = 32 mA; VCC = 4.5 V
-
II
input leakage current
VI = 5.5 V or GND; VCC = 0 V to
-
5.5 V
ICC
supply current
VI = 5.5 V or GND; IO = 0 A;
-
VCC = 1.65 V to 5.5 V
[1] All typical values are measured at VCC = 3.3 V and Tamb = 25 C.
Typ[1] Max
-
0.1
-
0.7
-
0.45
-
0.6
-
0.80
-
0.80
0.1 5
-
200
Unit
V
V
V
V
V
V
A
A
11. Dynamic characteristics
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V). For test circuit, see Figure 8.
Symbol Parameter
Conditions
40 C to +85 C
Min
Typ[1]
Max
tpd
propagation delay A to Y; see Figure 5
[2]
VCC = 1.65 V to 1.95 V
0.3
1.7
5.0
VCC = 2.3 V to 2.7 V
0.3
1.3
4.0
VCC = 2.7 V
0.5
1.7
5.0
VCC = 3.0 V to 3.6 V
0.5
1.6
3.7
VCC = 4.5 V to 5.5 V
CPD
power dissipation VI = GND to VCC;
capacitance
VCC = 3.3 V
0.5
1.3
3.0
[3]
-
14.9
-
40 C to +125 C Unit
Min
Max
0.3
6.5 ns
0.3
5.5 ns
0.5
6.5 ns
0.5
5.0 ns
0.5
4.0 ns
-
- pF
[1] Typical values are measured at Tamb = 25 C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.
[2] tpd is the same as tPLH and tPHL.
[3] CPD is used to determine the dynamic power dissipation (PD in W).
PD = CPD VCC2 fi N + (CL VCC2 fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
(CL VCC2 fo) = sum of outputs.
74LVC1GU04_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 14 May 2013
© NXP B.V. 2013. All rights reserved.
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