NXP Semiconductors
74LVC1G38
2-input NAND gate; open drain
10. Static characteristics
Table 7. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ
Tamb = −40 °C to +85 °C[1]
VIH
HIGH-level input voltage VCC = 1.65 V to 1.95 V
0.65 × VCC -
VCC = 2.3 V to 2.7 V
1.7
-
VCC = 2.7 V to 3.6 V
VCC = 4.5 V to 5.5 V
2.0
-
0.7 × VCC -
VIL
LOW-level input voltage VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
-
-
-
-
VCC = 2.7 V to 3.6 V
-
-
VCC = 4.5 V to 5.5 V
-
-
VOL
LOW-level output voltage VI = VIH or VIL
-
-
IO = 100 µA; VCC = 1.65 V to 5.5 V
-
-
IO = 4 mA; VCC = 1.65 V
-
-
IO = 8 mA; VCC = 2.3 V
IO = 12 mA; VCC = 2.7 V
-
-
-
-
IO = 24 mA; VCC = 3.0 V
-
-
IO = 32 mA; VCC = 4.5 V
-
-
II
input leakage current
VI = 5.5 V or GND;
VCC = 0 V to 5.5 V
-
±0.1
IOZ
OFF-state output current VI = VIH or VIL; VO = VCC or GND;
-
±0.1
VCC = 5.5 V
IOFF
power-off leakage current VI or VO = 5.5 V; VCC = 0 V
-
±0.1
ICC
supply current
∆ICC
additional supply current
CI
input capacitance
Tamb = −40 °C to +125 °C
VIH
HIGH-level input voltage
VI = 5.5 V or GND;
VCC = 1.65 V to 5.5 V; IO = 0 A
VI = VCC − 0.6 V; IO = 0 A;
VCC = 2.3 V to 5.5 V; per pin
VCC = 1.65 V to 1.95 V
-
0.1
-
5
-
2.5
0.65 × VCC -
VCC = 2.3 V to 2.7 V
1.7
-
VCC = 2.7 V to 3.6 V
VCC = 4.5 V to 5.5 V
2.0
-
0.7 × VCC -
VIL
LOW-level input voltage VCC = 1.65 V to 1.95 V
-
-
VCC = 2.3 V to 2.7 V
-
-
VCC = 2.7 V to 3.6 V
VCC = 4.5 V to 5.5 V
-
-
-
-
Max
Unit
-
V
-
V
-
V
-
V
0.35 × VCC V
0.7
V
0.8
V
0.3 × VCC V
-
0.1
V
0.45
V
0.3
V
0.4
V
0.55
V
0.55
V
±5
µA
±10
µA
±10
µA
10
µA
500
µA
-
pF
-
V
-
V
-
V
-
V
0.35 × VCC V
0.7
V
0.8
V
0.3 × VCC V
74LVC1G38_3
Product data sheet
Rev. 03 — 27 August 2007
© NXP B.V. 2007. All rights reserved.
5 of 15