Philips Semiconductors
Triple 3-input AND gate
Product specification
74LVC11
DC CHARACTERISTICS
At recommended operating conditions voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
TEST CONDITIONS
OTHER
VCC (V)
Tamb = −40 °C to +85 °C
VIH
HIGH level input voltage
1.2
2.7 to 3.6
VIL
LOW-level input voltage
1.2
2.7 to 3.6
VOH
VOL
ILI
ICC
∆ICC
HIGH-level output voltage
LOW-level output voltage
input leakage current
quiescent supply current
additional quiescent supply
current per input pin
VI = VIH or VIL
IO = −12 mA
IO = −100 µA
IO = −12 mA
IO = −24 mA
VI = VIH or VIL
IO = 12 mA
IO = 100 µA
IO = 24 mA
VI = 5.5 V or GND
VI = VCC or GND;
IO = 0
VI = VCC − 0.6 V;
IO = 0
2.7
3.0
3.0
3.0
2.7
3.0
3.0
3.6
3.6
2.7 to 3.6
MIN. TYP.(1) MAX. UNIT
VCC
−
2.0
−
−
−
−
−
−
V
−
V
GND V
0.8
V
VCC − 0.5 −
−
V
VCC − 0.2 VCC
−
V
VCC − 0.6 −
−
V
VCC − 1.0 −
−
V
−
−
0.40 V
−
GND 0.20 V
−
−
0.55 V
−
±0.1
±5
µA
−
0.1
10
µA
−
5
500
µA
Note
1. All typical values are measured at VCC = 3.3 V and Tamb = 25 °C.
AC CHARACTERISTICS
GND = 0 V; tr = tf ≤ 2.5 ns; CL = 50 pF; RL = 500 Ω.
SYMBOL
PARAMETER
TEST CONDITIONS
WAVEFORMS
VCC (V)
Tamb = −40 to +85 °C
tPHL/tPLH propagation delay
see Figs 6 and 7
2.7
3.0 to 3.6
Note
1. Typical value is measured at VCC = 3.3 V and Tamb = 25 °C.
MIN.
−
−
TYP.(1) MAX. UNIT
−
7.0
ns
3.7
6.2
ns
2004 Jan 13
7