74HCT1G00 View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
74HCT1G00 Datasheet PDF : 16 Pages
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Philips Semiconductors
2-input NAND gate
Product specification
74HC1G00; 74HCT1G00
DC CHARACTERISTICS
Family 74HC1G
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
Tamb (°C)
SYMBOL
PARAMETER
OTHER
−40 to +85
VCC (V) MIN. TYP.(1) MAX.
−40 to +125
MIN. MAX.
VIH
HIGH-level input voltage
2.0
1.5 1.2
−
4.5
3.15 2.4
−
6.0
4.2 3.2
−
1.5
−
3.15 −
4.2
−
VIL
LOW-level input voltage
2.0
−
0.8
0.5
−
0.5
4.5
−
2.1
1.35 −
1.35
6.0
−
2.8
1.8
−
1.8
VOH
HIGH-level output
voltage
VI = VIH or VIL; 2.0
1.9 2.0
−
IO = −20 µA
1.9
−
VI = VIH or VIL; 4.5
4.4 4.5
−
IO = −20 µA
4.4
−
VI = VIH or VIL; 6.0
5.9 6.0
−
IO = −20 µA
5.9
−
VI = VIH or VIL; 4.5
IO = −2.0 mA
4.13 4.32 −
3.7
−
VI = VIH or VIL; 6.0
IO = −2.6 mA
5.63 5.81 −
5.2
−
VOL
LOW-level output
voltage
VI = VIH or VIL; 2.0
−
0
IO = 20 µA
0.1
−
0.1
VI = VIH or VIL; 4.5
−
0
0.1
−
0.1
IO = 20 µA
VI = VIH or VIL; 6.0
−
0
0.1
−
0.1
IO = 20 µA
VI = VIH or VIL; 4.5
−
0.15 0.33 −
0.4
IO = 2.0 mA
VI = VIH or VIL; 6.0
−
0.16 0.33 −
0.4
IO = 2.6 mA
ILI
input leakage current VI = VCC or GND 6.0
−
−
1.0
−
1.0
ICC
quiescent supply
current
VI = VCC or GND; 6.0
−
−
10
−
20
IO = 0
UNIT
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
Note
1. All typical values are measured at Tamb = 25 °C.
2002 May 15
5
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