74AHCT1G00SE View Datasheet(PDF) - Diodes Incorporated.
Part Name
Description
MFG CO.
74AHCT1G00SE Datasheet PDF : 8 Pages
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74AHCT1G00
SINGLE 2 INPUT POSITIVE NAND GATE
Electrical Characteristics
Symbol Parameter Test Conditions
VOH
High Level
IOH = -50μA
Output Voltage IOH = -8mA
VCC
4.5V
4.5V
25ºC
Min Typ. Max
4.4 4.5
3.94
-40ºC to 85ºC
Min
Max
4.4
3.8
-40ºC to 125ºC
Unit
Min Max
4.4
V
3.70
VOL
Low Level
IOL = 50μA
Output Voltage IOL = 8mA
4.5V
4.5V
0 0.1
0.36
0.1
0.44
0.1
V
0.55
II Input Current VI = 5.5V or GND 0 to 5.5V
± 0.1
±1
±2
μA
ICC
Supply Current VI = 5.5V or GND
IO=0
5.5V
1
10
Ci
Input
Capacitance
VI = VCC – or
GND
5.5V
2.0 10
10
One input at 3.4V
ΔICC
Additional
Supply Current
Other inputs at
5.5V
1.35
1.5
VCC or GND
Thermal
Resistance
θJA Junction-to-
Ambient
SOT25
SOT353
204
(Note 4)
371
Thermal
θJC
Resistance
Junction-to-
Case
SOT25
SOT353
52
(Note 4)
143
40
μA
10
pF
mA
oC/W
oC/W
Note: 4. Test conditions for SOT25, and SOT353: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
Switching Characteristics
VCC = 5V ± 0.5V (see Figure 1)
Parameter
From
(Input)
TO
(OUTPUT)
25ºC
Min Typ. Max
tpd
A or B
Y
CL=15pF 0.6
3.6
6.2
CL=50pF 0.6
5.0
7.9
-40ºC to 85ºC
Min
Max
0.6
7.1
0.6
9.0
-40ºC to 125ºC
Unit
Min
Max
0.6
8.0
ns
0.6
10.0
ns
Operating Characteristics
TA = 25 ºC
Parameter
Cpd
Power dissipation capacitance
Test
Conditions
f = 1 MHz
No Load
VCC = 5V
Typ.
11
Unit
pF
74AHCT1G00
Document number: DS35179 Rev. 1- 2
4 of 8
www.diodes.com
May 2011
© Diodes Incorporated
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