74AHC30BQ,115 View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

MFG CO.

74AHC30BQ,115

8-input NAND gate

NXP Semiconductors. 

NXP Semiconductors

74AHC30; 74AHCT30

8-input NAND gate

6. Functional description

Table 3. Function table[1]

Input

Output

A

B

C

D

E

F

G

H

Y

L

X

X

X

X

X

X

X

H

X

L

X

X

X

X

X

X

H

X

X

L

X

X

X

X

X

H

X

X

X

L

X

X

X

X

H

X

X

X

X

L

X

X

X

H

X

X

X

X

X

L

X

X

H

X

X

X

X

X

X

L

X

H

X

X

X

X

X

X

X

L

H

H

H

H

H

H

H

H

H

L

[1] H = HIGH voltage level;

L = LOW voltage level;

X = don’t care.

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).

Symbol Parameter

Conditions

Min

Max

Unit

VCC

supply voltage

VI

input voltage

IIK

input clamping current

IOK

output clamping current

IO

output current

VI < −0.5 V

VO < −0.5 V or VO > VCC + 0.5 V

VO = −0.5 V to (VCC + 0.5 V)

−0.5

+7.0

V

−0.5

+7.0

V

[1] −20

-

mA

[1] −20

+20

mA

−25

+25

mA

ICC

IGND

Tstg

Ptot

supply current

ground current

storage temperature

total power dissipation

Tamb = −40 °C to +125 °C

-

−75

−65

[2] -

+75

mA

-

mA

+150

°C

500

mW

[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

[2] For SO14 packages: above 70 °C the value of Ptot derates linearly at 8 mW/K.

For TSSOP14 packages: above 60 °C the value of Ptot derates linearly at 5.5 mW/K.

For DHVQFN14 packages: above 60 °C the value of Ptot derates linearly at 4.5 mW/K.

74AHC_AHCT30_3

Product data sheet

Rev. 03 — 26 June 2009

© NXP B.V. 2009. All rights reserved.

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