IXFH60N20 View Datasheet(PDF) - IXYS CORPORATION
Part Name
Description
MFG CO.
IXFH60N20 Datasheet PDF : 2 Pages
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Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
30 40
S
5200
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
880
pF
260
pF
38
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
63
ns
RG = 2.5 Ω (External),
85
ns
26
ns
155
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
38
nC
55
nC
(TO-247)
0.42 K/W
0.25
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
60 A
240 A
1.5 V
trr
250 ns
QRM
IF = 25A, -di/dt = 100 A/µs, VR = 50 V
0.7
µC
IRM
8
A
IXFH 60N20
IXFT 60N20
TO-247 AD (IXFH) Outline
123
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
∅P
Q
R
S
Millimeter
Min. Max.
4.7
5.3
2.2 2.54
2.2
2.6
1.0
1.4
1.65 2.13
2.87 3.12
.4
20.80
15.75
.8
21.46
16.26
5.20
19.81
5.72
20.32
4.50
3.55 3.65
5.89 6.40
4.32 5.49
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205
.780
0.225
.800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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