3N60-A-TA3-R View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
MFG CO.
3N60-A-TA3-R Datasheet PDF : 8 Pages
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3N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
3N60-A
600
V
3N60-B
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 1)
IAR
3.0
A
Continuous Drain Current
ID
3.0
A
Pulsed Drain Current (Note 1)
IDM
12
A
Avalanche Energy
Single Pulsed (Note 2)
EAS
Repetitive (Note 1)
EAR
200
mJ
7.5
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
TO-220
75
Power Dissipation
TO-220F/TO-220F1
PD
34
W
TO-251/TO-252
50
Junction Temperature
Operating Temperature
Storage Temperature
TJ
TOPR
TSTG
+150
℃
-55 ~ +150
℃
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
Junction-to-Ambient
Junction-to-Case
PARAMETER
TO-220
TO-220F/TO-220F1
TO-251/TO-252
TO-220
TO-220F/TO-220F1
TO-251/TO-252
SYMBOL
θJA
θJC
RATING
62.5
62.5
110
1.67
3.68
2.5
ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
3N60-A
Drain-Source Breakdown Voltage
3N60-B
BVDSS VGS = 0 V, ID = 250 μA
Drain-Source Leakage Current
IDSS
VDS = 600 V, VGS = 0 V
Gate-Source Leakage Current Forward
Reverse
IGSS
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
Breakdown Voltage Temperature
Coefficient
△BVDSS/△TJ ID = 250 μA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 1.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25 V, VGS = 0 V, f = 1MHz
MIN TYP MAX UNIT
600
V
650
V
10 μA
100 nA
-100 nA
0.6
V/℃
2.0
4.0 V
2.8 3.6 Ω
350 450 pF
50 65 pF
5.5 7.5 pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-110,F
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