2SK2796S View Datasheet(PDF) - Renesas Electronics

Part Name

Description

MFG CO.

2SK2796S

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

2SK2796(L), 2SK2796(S)

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS(on) = 0.12 Ω typ.

• 4 V gate drive devices.

• High speed switching

Outline

REJ03G1034-0500

(Previous: ADE-208-534C)

Rev.5.00

Sep 07, 2005

RENESAS Package code: PRSS0004ZD-A

(Package name: DPAK(L)-(1))

4

RENESAS Package code: PRSS0004ZD-C

(Package name: DPAK(S))

4

D

G

12 3

1

23

S

1. Gate

2. Drain

3. Source

4. Drain

Rev.5.00 Sep 07, 2005 page 1 of 8

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