2SK2912 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

MFG CO.

2SK2912

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK2912(L), 2SK2912(S)

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Avalanche current

Avalanche Energy

Channel dissipation

VDSS

VGSS

ID

I *1

D(pulse)

I DR

I AP * 3

EAR* 3

Pch*2

Channel temperature

Tch

Storage temperature

Tstg

Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

Ratings

Unit

60

V

±20

V

40

A

160

A

40

A

40

A

137

mJ

50

W

150

°C

–55 to +150

°C

2

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