2SK2796L View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

MFG CO.

2SK2796L

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

Reverse Drain Current vs.

Source to Drain Voltage

10

8

5V

6

10 V

4

VGS = 0, –5 V

2

Pulse Test

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage VSD (V)

2SK2796(L), 2SK2796(S)

Maximun Avalanche Energy vs.

Channel Temperature Derating

2.5

I AP = 5 A

2.0

V DD = 25 V

duty < 0.1 %

Rg > 50 W

1.5

1.0

0.5

0

25 50 75 100 125 150

Channel Temperature Tch (°C)

Vin

15 V

Avalanche Test Circuit

V DS

Monitor

Rg

50 W

L

I AP

Monitor

D. U. T

VDD

Avalanche Waveform

EAR =

1

2

• L • I AP2•

VDSS

VDSS – V DD

I AP

ID

V(BR)DSS

VDS

VDD

0

7

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