2SK1764KYTL-E View Datasheet(PDF) - Renesas Electronics

Part Name

Description

MFG CO.

2SK1764KYTL-E

Silicon N Channel MOS FET

Renesas Electronics 

2SK1764

Absolute Maximum Ratings

Item

Symbol

Drain to source voltage

VDSS

Gate to source voltage

VGSS

Drain current

Drain peak current

ID

ID(pulse)*1

Body to drain diode reverse drain current

IDR

Channel power dissipation

Pch*2

Channel temperature

Tch

Storage temperature

Tstg

Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10 %

2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)

Ratings

60

±20

2

4

2

1

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

W

°C

°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage V(BR)DSS

60

Gate to source breakdown voltage V(BR)GSS ±20

Gate to source cutoff voltage

VGS(off)

1

Drain to source cutoff current

IDSS

—

Gate to source cutoff current

IGSS

—

Static drain to source on state

resistance

RDS(on)1

—

Static drain to source on state

resistance

RDS(on)2

—

Forward transfer admittance

|yfs|

0.9

Input capacitance

Ciss

—

Output capacitance

Coss

—

—

—

—

—

—

2

—

10

—

±5

0.3

0.45

0.4

0.60

1.7

—

140

—

75

—

V ID = 10 mA, VGS = 0

V IG = ±100 µA, VDS = 0

V VDS = 10 V, ID = 1 mA

µA VDS = 50 V, VGS = 0

µA VGS = ±15 V, VDS = 0

Ω

VGS = 10 V, ID = 1 A*3

Ω

VGS = 4 V, ID = 1 A*3

S

VDS = 10 V, ID = 1 A*3

pF VDS = 10 V, VGS = 0,

pF f = 1 MHz

Reverse transfer capacitance

Turn on time

Turn off time

Note: 3. Pulse Test

Crss

—

20

—

pF

ton

—

18

—

ns VDS = 10 V, ID = 1 A*3,

toff

—

80

—

ns RL = 30 Ω

Rev.2.00 Sep 07, 2005 page 2 of 6

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