2SD750O View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

2SD750O

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD750

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 5mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A

VBE(on) Base-Emitter On Voltage

IC= 5A; VCE= 4V

ICBO

Collector Cutoff Current

VCB= 40V; IE= 0

hFE-1

DC Current Gain

IC= 1A; VCE= 4V

hFE-2

DC Current Gain

IC= 5A; VCE= 4V

fT

Current-Gain—Bandwidth Product

IC= 0.5A; VCE= 10V

MIN TYP. MAX UNIT

80

V

7

V

2.0

V

1.5

V

30 μA

40

30

120

1

MHz

‹ hFE-2 Classifications

Q

P

O

30-60 40-80 60-120

isc Website：www.iscsemi.cn

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