D608 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

D608

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD608

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB=B 0.1A

VBE(sat) Base-Emitter Saturation Voltage

IC= 1A; IB=B 0.1A

ICBO

Collector Cutoff Current

VCB= 120V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 3V; IC= 0

hFE-1

DC Current Gain

IC= 5mA; VCE= 5V

hFE-2

DC Current Gain

IC= 0.3A; VCE= 5V

COB

Collector Output Capacitance

IE= 0; VCB= 10V; f= 1MHz

fT

Current-Gain—Bandwidth Product

IC= 0.1A; VCE= 5V

MIN TYP. MAX UNIT

2.0

V

1.5

V

1.0 μA

1.0 μA

25

40

200

35

pF

40

MHz

‹ hFE-2 Classifications

S

R

Q

40-80 60-120 100-200

isc Website：www.iscsemi.cn

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