2SD2495 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
MFG CO.
2SD2495 Datasheet PDF : 3 Pages
| |||
Inchange Semiconductor
Silicon NPN Darlington Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=5mA
VBEsat Base-emitter saturation voltage
IC=5A; IB=5mA
ICBO
Collector cut-off current
VCB=110V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=5A ; VCE=4V
fT
Transition frequency
IC=0.5A ; VCE=12V
COB
Collector output capacitance
f=1MHz;VCB=10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A; IB1=-IB2=5mA
VCC=30V ,RL=6Ω
hFE Classifications
O
P
Y
5000-12000 6500-20000 15000-30000
Product Specification
2SD2495
MIN TYP. MAX UNIT
110
V
2.5
V
3.0
V
0.1 mA
0.1 mA
5000
60
MHz
55
pF
0.8
μs
6.2
μs
1.1
μs
2
Share Link: 