2SD2384 View Datasheet(PDF) - Toshiba
Part Name
Description
MFG CO.
2SD2384 Datasheet PDF : 5 Pages
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2SD2384
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
2SD2384
Power Amplifier Applications
Unit: mm
· High breakdown voltage: VCEO = 140 V (min)
· Complementary to 2SB1555
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
Unit
140
V
140
V
5
V
7
A
0.1
A
100
W
150
°C
−55 to 150
°C
Equivalent Circuit
COLLECTOR
BASE
JEDEC
―
JEITA
―
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
≈ 100 Ω
EMITTER
1
2003-02-04
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