2SD1727 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

2SD1727

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD1727

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 500mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB=B 0.4A

VBE(sat) Base-Emitter Saturation Voltage

IC= 1A; IB=B 0.4A

hFE

DC Current Gain

IC= 0.5A; VCE= 5V

ICBO

Collector Cutoff Current

VCB= 750V; IE= 0

VCB= 1500V; IE= 0

VECF

C-E Diode Forward Voltage

IF= 1.5A

fT

Transition Frequency

IC= 0.5A; VCE= 10V

Switching Times, Resistive Load

ts

Storage Time

tf

Fall Time

IC= 1A; IB1= 0.3A; IB2= -0.6A,

VCC= 200V

MIN TYP MAX UNIT

7

V

8.0

V

1.5

V

5

25

10 μA

1.0 mA

1.5

V

2

MHz

1.0

μs

0.2

μs

isc Website：www.iscsemi.cn

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