2SD1398 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

2SD1398

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector- emitter sustaining voltage IC=100mA; RBE=∞

V(BR)CBO Collector-base breakdown voltage

IC=5mA; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=200mA; IC=0

VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A

VBEsat Base-emitter saturation voltage

IC=4A; IB=0.8A

ICBO

Collector cut-off current

VCB=800V; IE=0

IEBO

Emitter cut-off current

VEB=4V; IC=0

hFE

DC current gain

IC=1A ; VCE=5V

fT

Transition frequency

IC=1A ; VCE=10V

VF

Diode forward voltage

IEC=5A

Product Specification

2SD1398

MIN TYP. MAX UNIT

800

V

1500

V

7

V

5.0

V

1.5

V

10

μA

40

130 mA

8

3

MHz

2.0

V

2

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