SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4880
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR )CEO Collector-emitter breakdown voltage IC=10mA; RBE=9
V(BR )EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=10A; IB=2.5 A
VBEsat
Base-emitter saturation voltage
IC=10A; IB=2.5 A
ICES
Collector cut-off current
VCE=1700V;RBE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=1A ; VCE=5V
900
V
5
V
5.0
V
1.5
V
500 µA
100 µA
8
40
2