SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3855
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
ICBO
Collector cut-off current
VCB=200V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=3A ; VCE=4V
fT
Transition frequency
IC=0.5A ; VCE=12V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A;RL=12@
IB1=- IB2=0.5A
VCC=60V
MIN TYP. MAX UNIT
140
V
2.0
V
100 µA
100 µA
50
20
MHz
0.30
µs
2.40
µs
0.40
µs
2