2SC3850 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
MFG CO.
2SC3850 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3850
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.5A ;L=25mH
400
V
VCEsat Collector-emitter saturation voltage IC=10A ;IB=2A
1.0
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=10A ;IB=2A
VCB=500V ;IE=0
VEB=7V; IC=0
1.5
V
100 μA
100 μA
hFE-1
DC current gain
IC=2A ; VCE=5V
15
hFE-2
DC current gain
IC=10A ; VCE=5V
10
fT
Transition frequency
IC=1A ; VCE=10V
15
MHz
Switching times
固IN电C半H导AN体GE SEMICONDUCTOR ton
Turn-on time
ts
Storage time
tf
Fall time
IC=10A
IB1=-IB2=2A
VCC=125V
1.0 μs
2.5 μs
1.0 μs
2
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