2SC3626 View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

MFG CO.

2SC3626

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC3626

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0

V(BR)CBO Collector-base breakdown voltage

IC=1mA; IE=0

VCEsat Collector-emitter saturation voltage IC=4 A;IB=0.8 A

VBEsat Base-emitter saturation voltage

IC=4 A;IB=0.8 A

ICBO

Collector cut-off current

VCB=400V ;IE=0

IEBO

Emitter cut-off current

VEB=7V ;IC=0

hFE-1

DC current gain

IC=1A ; VCE=5V

hFE-2

DC current gain

IC=4A ; VCE=5V

Switching times

tr

Rise time

ts

Storage time

tf

Fall time

VCC<200V,RL=50?

IC=4A ;IB1=-IB2=0.4 A

MIN TYP. MAX UNIT

400

V

500

V

1.0

V

1.5

V

100 µA

1

mA

15

10

1.0

µs

2.5

µs

1.0

µs

2

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