2SC2488 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

2SC2488

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC2488

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; IB= 0

150

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB=B 0.8A

2.0

V

VBE(on) Base-Emitter On Voltage

IC= 8A; VCE= 5V

2.5

V

ICBO

Collector Cutoff Current

VCB= 70V; IE= 0

1

mA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE-1

hFE-2

fT

www.iscsemi.cn DC Current Gain

IC= 1A; VCE= 5V

DC Current Gain

IC= 8A; VCE= 5V

Current-Gain—Bandwidth Product

IC= 0.5A; VCE= 10V

40

20

50

‹ hFE-2 Classifications

R

Q

P

O

2

mA

280

MHz

40-80 60-120 90-180 140-280

isc Website：www.iscsemi.cn

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