2SC2579 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

2SC2579

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC2579

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CBO Collector-base breakdown voltage

IC=5mA; IE=0

160

V

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=∞

160

V

V(BR)EBO Emitter-base breakdown voltage

IE=5mA ; IC=0

6

V

ICBO

Collector cut-off current

VCB=160V; IE=0

0.1 mA

IEBO

Emitter cut-off current

VEB=6V; IC=0

0.1 mA

hFE

DC current gain

IC=3A ; VCE=4V

50

VCE(sat) Collector-emitter saturation voltage IC=5A ; IB=0.5A

固IN电C半H导AN体GE SEMICONDUCTOR fT

Transition frequency

IC=0.5A ; VCE=10V

2.0

V

20

MHz

2

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