2SC2062S View Datasheet(PDF) - ROHM Semiconductor
Part Name
Description
MFG CO.
2SC2062S Datasheet PDF : 3 Pages
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Transistors
2SC2062S
High-gain Amplifier Transistor (32V, 0.3A)
2SC2062S
zFeatures
1) Darlington connection for a high hFE.
(DC current gain = 5000 (Min.) at VCE = 3V, IC = 0.1A.)
2) High input impedance.
zAbsolute maximum ratings (Ta=25°C)
C
B
zExternal dimensions (Unit : mm)
SPT
4.0
2.0
(1)Emitter
(2)Collector
(3)Base
0.45
2.5
5.0
(1) (2) (3)
0.5 0.45
Taping specifications
E : Emitter
C : Collector
E
B : Base
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCES
32
V
Emitter-base voltage
VEBO
12
V
Collector current
IC
0.3
A
Collector power dissipation
PC
0.3
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVCBO
40
−
−
V
IC=100µA
BVCES
32
−
−
V
IC=10mA
Emitter-base breakdown voltage
BVEBO
12
−
−
V
IE=100µA
Collector cutoff current
ICBO
−
−
0.1
µA VCB=30V
Emitter cutoff current
IEBO
−
−
0.1
µA VEB=12V
DC current transfer ratio
hFE
10000
−
−
−
VCE/IC=3V/0.1A
Collector-emitter saturation voltage
VCE(sat)
−
−
1.4
V
IC/IB=200mA/0.2mA
Transition frequency
fT
−
200
−
MHz VCE=5V , IE= −10mA , f=100MHz
∗
Output capacitance
Cob
−
2.5
−
pF VCB=10V , IE=0A , f=1MHz
∗ Transition frequency of the device.
zPackaging specifications and hFE
Type
2SC2062S
Package
hFE
SPT
C
Code
Basic ordering unit (pieces)
TP
5000
Rev.A
1/2
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