SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1785
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=10A; IB=1A
VBEsat
Base-emitter saturation voltage
IC=10A; IB=1A
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
VCB=200V; IE=0
VEB=6V; IC=0
IC=5A ; VCE=4V
MIN TYP. MAX UNIT
200
V
6
V
2.0
V
2.5
V
100 µA
100 µA
20
2