SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1141
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=8A; IB=1.6A
VBEsat Base-emitter saturation voltage
IC=8A; IB=1.6A
ICBO
Collector cut-off current
VCB=600V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=7.5A ; VCE=5V
fT
Transition frequency
IC=1A ; VCE=5V
MIN TYP. MAX UNIT
300
V
7
V
1.5
V
1.6
V
0.1 mA
0.1 mA
15
50
10
25
10
MHz
2