SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB686
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ,IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-10mA ,IC=0
VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.4A
VBE
Base-emitter voltage
IC=-4A ; VCE=-5V
ICBO
Collector cut-off current
VCB=-100V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
IC=-1A ; VCE=-5V
fT
Transition frequency
Cob
Collector output capacitance
IC=-1A ; VCE=-5V
IE=0 ; VCB=-10V ;f=1MHz
MIN TYP. MAX UNIT
-100
V
-5
V
-2.0
V
-1.5
V
-10
µA
-10
µA
55
160
10
MHz
270
pF
hFE Classifications
R
O
55-110
80-160
2